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Overview

The TCI DDR 4/3 PHY is a high-performance, scalable system using a radically new architecture that continuously and automatically adjusts each pin individually, correcting skew within byte lanes. This state-of-the-art tuning acts independently on each pin, data phase and chip select value. Read data eye and gate timing are also continuously adjusted. Automatic training is included for multi-cycle read gate timing and write leveling, write data eye timing, and internal and external (on DRAM) Vref setting.

Remarkable physical flexibility allows the PHY to adapt to each customer s die floorplan and package constraints, yet is delivered and verified as a single hard macro for easy timing closure with no assembly required.

The PHY is DFI 3.1 compliant, and when combined with the Northwest Logic DDR 4/3 memory controller, a complete and fully-automatic DDR 4/3 system is realized.

Benefits

  • Automatic Deskew - Skew among pins is automatically corrected; intentional skew can reduce SSO
  • Tuning - State-of-the-art tuning is the key to a high performance DDR system
  • Complete PHY - Completely assembled and validated hard PHY and I/O ring means no assembly is required and performance is guaranteed
  • Flexibility - Proprietary tools generate and validate a PHY fitted to the customer s die floorplan and package
  • Timing Closure - Memory controller to PHY timing closure is eased by a localized interface and clock deskew circuitry
  • Instrumentation - PHY resources can measure data eye and jitter per pin, speeding up board bring-up

Applications

  • DDR4-2400
  • DDR3-2133
  • LPDDR3-1066

Tech Specs

FoundryTSMC
Geometry nm28
Target Process NodeTSMC 28nm HPM

Features

  • Supports DDR4-2400, DDR3-2133 and LPDDR3-1066, simultaneously with one hard macro
  • DFI 3.1 compliant
  • Supports x4, x8 and x16 DRAMs
  • Up to 144 bits wide
  • Up to 4 chip selects, each with unique tuning
  • Incudes PLL, with frequency multiplication from low frequency reference
  • Per-pin architecture, similar to a SerDes, automatically corrects skew, increases data eye and eliminates most parallel interface problems
  • Continuous adjustment of read data eye and gate timing
  • Automatic Training includes:
    • Multi-cycle read gate training and write leveling
    • Write data eye centering
    • Internal Vref adjustment
    • External Vref adjustment in each DRAM
  • Localized, clock-deskewed PHY-to-memory controller interface to ease timing closure
  • Full speed read/write BIST with pseudo-random data, mux-scan ATPG and 1149.1 Boundary Scan
  • Circuitry in each pin able to measure the data eye and jitter, and calculate flight delays

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