Leti spin-out gets €5.7m for GaN power switches

by Richard Wilson - Electronics Weekly, Jun. 24, 2015 – 

Exagan, a French start-up spun out of CEA-Leti and Soitec to develop gallium-nitride (GaN) power semiconductors, has raised €5.7m in first-round financing that will be used to produce high-speed power switching devices on 200mm wafers.

Exagan, which is working with European foundry X-FAB to produce devices on 200mm wafers, is aiming to be Europe's primary supplier of GaN-based power switches for the solar and automotive markets.

In partnership with CEA-Leti, Grenoble-based Exagan is developing the G-FETTM 650V power-switching platform.

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