Samsung signs NXP as MRAM-on-FDSOI customer

According to reports from Korea's ETNews and IPnomics Samsung Electronics will provide details of a prototype SoC with embedded magntic RAM (MRAM) at the Samsung Foundry Forum Event in Santa Clara on May 24.

By Peter Clarke (eeNews Europe), Apr. 27, 2017 – 

in 2016 Samsung Foundry said it was working on embedded flash and embedded MRAM options for its 28nm FDSOI manufacturing process (see FDSOI to get embedded MRAM, flash options at 28nm ). It was expected that embedded flash would be offered first with risk production at the end of 2017 while embedded spin-torque transfer MRAM would come in 2018.

The latest report states that NXP Semiconductors has been signed as a first customer and have a contract for the mass-production of 28nm FDSOI and that it will start with embedded flash to be followed by embedded MRAM in the manufacture of i.MX series SoCs and microcontrollers for Internet of Things applications.

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