X-Fab, Exagan make GaN-on-Si on 200mm wafers


Two years after entering into an agreement to develop the technology, X-Fab Silicon Foundries (Erfurt, Germany) and Exagan SA (Grenoble, France) have started production of high-voltage power devices on 200-mm GaN-on-silicon wafers.

By Peter Clarke, EENews Europe, May. 10, 2017 – 

The higher performance GaN process enables smaller and more efficient electrical converters while the ability to use CMOS production infrastructure to get to larger wafer sizes translates into a lower cost of production per unit area.

Exagan and X-FAB have successfully resolved many of the challenges related to material stress, defectivity and process integration while using standard fabrication equipment and process recipes. And the breakthrough is coming at a time when GaN power devices are gaining traction in the market with adoption in applications such as electrical vehicle charging stations, servers, automobiles and industrial systems.

Click here to read more ...

 Back

Partner with us

Visit our new Partnership Portal for more information.

Submit your material

Submit hot news, product or article.

List your Products

Suppliers, list and add your products for free.

© 2016 Design And Reuse

All Rights Reserved.

No portion of this site may be copied, retransmitted,
reposted, duplicated or otherwise used without the
express written permission of Design And Reuse.