X-Fab, Exagan make GaN-on-Si on 200mm wafers

Two years after entering into an agreement to develop the technology, X-Fab Silicon Foundries (Erfurt, Germany) and Exagan SA (Grenoble, France) have started production of high-voltage power devices on 200-mm GaN-on-silicon wafers.

By Peter Clarke, EENews Europe, May. 10, 2017 – 

The higher performance GaN process enables smaller and more efficient electrical converters while the ability to use CMOS production infrastructure to get to larger wafer sizes translates into a lower cost of production per unit area.

Exagan and X-FAB have successfully resolved many of the challenges related to material stress, defectivity and process integration while using standard fabrication equipment and process recipes. And the breakthrough is coming at a time when GaN power devices are gaining traction in the market with adoption in applications such as electrical vehicle charging stations, servers, automobiles and industrial systems.

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