Toshiba Memory America Unveils UFS Devices Utilizing 64-Layer, 3D Flash Memory

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SAN JOSE, Calif. , Nov. 29, 2017 – Toshiba Memory America, Inc. (TMA)*, the world leader in memory solutions, has begun sampling Universal Flash Storage (UFS) devices utilizing its cutting-edge 64-layer BiCS FLASH™ 3D flash memory. The new UFS devices meet performance demands for applications that require high-speed read/write performance and low power consumption, including mobile devices such as smartphones and tablets and augmented /virtual reality systems.
All four devices are compliant with JEDEC UFS Ver. 2.1, including HS-GEAR3, which has a theoretical interface speed of up to 5.8Gbps per lane (x2 lanes=11.6Gbps) while also suppressing any increase in power consumption. Sequential read and write performanceof the 64GB device are 900MB/sec and 180MB/sec, while the random read and write performance are approximately 200 percent and 185 percent better, respectively, than those of previous generation devices. Due to its serial interface, UFS supports full duplexing, which enables both concurrent reading and writing between the host processor and UFS device.

Toshiba was the first company in the world to announce 3D flash memory technology, and the addition of 3D-based UFS keeps the company at the forefront of innovation while simultaneously enhancing its existing lineup of BiCS FLASH solutions.

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