SOI wafers optimized for NIR, 3D imaging

Find the Latest SoC Solutions
for... Automotive... IoT... Security... Audio... Video

Dec. 11, 2017 – 

The wafer enables increased performance in the near-infrared spectrum including 3D image sensors such as those used in the latest smartphones for augmented and virtual reality applications and facial recognition.

The Imager-SOI provides enhanced quantum efficiency by trapping light above the buried oxide (BOX) layer and reduces cross-talk between pixels. The BOX also limits the impact of substrate noise and metal contamination, and acts as a diffusion barrier to prevent metal contaminants migrating into pixels.

The net result is an improved signal-to-noise ratio in the NIR spectrum, the company claimed. Wafers are available at 300mm diameter.

 Back