Samsung in Production of Second-gen 10nm DRAM

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SAN FRANCISCO, Dec. 20, 2017 – South Korea's Samsung Electronics said it has commenced production of the second generation of its 10nm-class 8-Gb DDR4 DRAM. The chips achieve speeds of up to 3,600 megabits per second (Mbps) and are produced without the need for extreme ultraviolet (EUV) lithography.

Gyoyoung Jin, president of Samsung's memory business, said through a press statement that new technologies in DRAM circuit design and process technology enabled Samsung to break through "a major barrier for DRAM scalability." To meet booming market demand, he said Samsung would rapidly ramp up its second-generation 10nm-class DRAM production and also aggressively expand production of the first generation of the chips.

Devices labeled 10nm-class have feature sizes as small as 10 to 19 nanometers.

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