Attopsemi Published Two Papers About Innovative I-fuse™ 0.4V/1uA read and 250°C Bake Reliability Data on 22nm FD-SOI at IEEE S3S Conference, 2019.

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Santa Clara, California, Oct. 23, 2019 – 

Attopsemi Technology, a revolutionary fuse-based OTP IP provider, published two papers at IEEE S3S conference on October 14th and 15th, 2019 titled "High Temperature Reliability Studies of Innovative Fuse Programming Mode" and "A 64x1 Fuse Memory with 0.4V/1μA Read and 0.9V Program Voltage on 22nm FD-SOI" attracted lots of attentions from the audience.

"Battery-less IoT requires 0.4V/1uA read for energy harvest. The conventional OTP needs high voltage and high current to program such that low voltage/low current reads are almost impossible." said Shine Chung, Chairman of Attopsemi. "However, the non-explosive I-fuse™ made 0.9V programming possible to enable low voltage read. We invented a time-based sensing technique, never used in memory design before, to achieve 1uA read current. By comparing the discharge rates of two capacitors through an I-fuse™ and a reference resistor so as to determine if the I-fuse™ resistance is higher or lower than the reference."

"The high reliability of the I-fuse™ baked at 250°C for 1,000hr was studied thoroughly in this paper. Not only the post-programmed I-fuse™ cell current distributions are Gaussian-like, the post-stressed distributions are also Gaussian-like. There are almost no drifts in cell currents if programmed at nominal or lower programming voltages. " stated by Shine Chung.

These two papers marked important milestones in OTP development history. The first paper showed I-fuse™ can be read at low voltage and low current for ultra-low energy harvest applications, after proving I-fuse™ can be programmed at near core voltage. The other paper showed I-fuse™ can sustain 250°C for 1,000hr without any fuse resistance changes, which is the only OTP to meet and surpass AEC-Q100 Grade 0 specifications.

For more information, please visit Attopsemi website

http://www.attopsemi.com/

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