Samsung to expand MRAM applications

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Firm improves MTJ patterning technology

www.thelec.net, Feb. 04, 2021 – 

Samsung Electronics said on Thursday that it plans to expand the application of magnetoresistive RAM (MRAM).

MRAM stores data in magnetic domains, unlike most RAMs that store them in electric charge or current flows.

The company improved the magnetic tunnel junction (MTJ) function of its MRAM to make it applicable in more areas, Han Shin-hee, principle engineer at Samsung Foundry, said at Semicon Korea.

Samsung will expand the application of MRAM to automotive, wearable, graphic memory, low level cache, internet of things and edge artificial intelligence, the engineer said.

The company was able to meet the requirements of MTJ patterning without decreases in shunt and speed, Han said. Failure rate was 100ppm, a significant improvement than before, the engineer said.

The electrical resistance in MRAM differs depending on whether the two ferromagnetic plates are parallel or antiparallel. MTJ patterning is crucial in improving performance and reliability of MRAM.

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