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UK government helps NWF develop GaN foundry process
The UK Research and Innovation agency is supporting the development of a gallium-nitride high electron mobility transistor foundry process for Newport Wafer Fab Ltd.
www.eenewseurope.com, Feb. 09, 2021 –
The project is being coordinated by the Compound Semiconductor Centre Ltd (CSC) and NWF with a plan to deliver a 650V GaN-on-silicon HEMT process for implementation with 200mm-diameter wafers.
The epitaxial process makes use of intellectual property developed by CSC in partnership with IQE. The project is supported by UKRI under the Automotive Transformation Fund although the amount of funding was not disclosed.
"This is an exciting step towards NWFs vision of becoming a major manufacturer of compound-on-silicon products. We see the wide bandgap power device market as an excellent area to address in our plans to expand our current manufacturing footprint of 8,000 wafer starts per week to 14,000, and it's a natural opportunity for us to pursue given our heritage in high power silicon MOSFET, IGBT and GaN device development manufacturing," said Sam Evans, NWF's director of external affairs, in a statement issued by CSC.
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