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GF foundry deal for 6G RF GaN
Raytheon Technologies is working with GlobalFoundries to develop and commercialise a gallium nitride (GaN) on silicon process for 5G and 6G RF.
www.eenewseurope.com, May. 24, 2021 –
Raytheon Technologies is to license its proprietary gallium nitride (GaN) on silicon technology and technical expertise to Globalfoundries to develop a new process at the GF Fab 9 facility in Burlington, Vermont.
GaN on silicon is an increasingly popular technology for RF and power applications and Raytheon sees this as key for 5G and 6G RF and infrastructure chips. These will be critical for Raytheon's subsidiaries that include Collins Aerospace, engine maker Pratt & Whitney, Raytheon Intelligence & Space and Raytheon Missiles & Defense.
The GaN process technology will increase RF performance while maintaining production and operational costs, enabling levels of power and power efficiency for 5G and 6G RF millimeter-wave operating frequency standards.
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