Rambus HBM3-Ready Memory Subsystem Advances AI/ML Performance

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Rambus' HBM3-ready memory interface subsystem supports breakthrough data rates of up to 8.4Gbps and can deliver over 1Tbps of bandwidth.

www.eetasia.com, Aug. 23, 2021 – 

Rambus Inc.'s HBM3-ready memory interface subsystem, consisting of a fully-integrated PHY and digital controller, supports breakthrough data rates of up to 8.4Gbps and can deliver over a terabyte per second of bandwidth–more than double that of high-end HBM2E memory subsystems. With a market-leading position in HBM2/2E memory interface deployments, Rambus is ideally suited to enable customers' implementations of accelerators using next-generation HBM3 memory.

"The memory bandwidth requirements of AI/ML training are insatiable with leading-edge training models now surpassing billions of parameters," said Soo Kyoum Kim, associate vice president, Memory Semiconductors at IDC. "The Rambus HBM3-ready memory subsystem raises the bar for performance, enabling state-of-the-art AI/ML and HPC applications."

Rambus achieves HBM3 operation of up to 8.4Gbps leveraging over 30 years of high-speed signaling expertise, and a strong history of 2.5D memory system architecture design and enablement. In addition to the fully-integrated HBM3-ready memory subsystem, Rambus provides its customers with interposer and package reference designs to speed their products to market.

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