Samsung to Detail Second-Gen 3nm Node, But Admits It Is Behind TSMC

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Samsung to unveil first details about SF3 process technology with MBCFETs.

www.tomshardware.com/, May. 08, 2023 – 

Although Samsung Foundry started to produce chips using its SF3E (aka 3nm gate-all-around early) manufacturing technology last June, the company only uses this tech for select chips, and it's not expected to be used widely. Meanwhile, the company is working on its second-gen 3nm-class node called SF3 (3GAP) and will disclose more information about it at the upcoming 2023 Symposium on VLSI Technology and Circuits in Kyoto, Japan.

Samsung's Sf3 (3nm-class) fabrication technology (set to be introduced at the T1-2 session) will use the company's second-gen Multi-Bridge-Channel field-effect transistors (MBCFET). This new fabrication technology builds upon the first-gen GAA device (SF3E) that's already in mass production, incorporating further optimization.

Samsung claims that compared to SF4 (4LPP, 4nm-class, low power plus), SF3 offers a 22% higher performance at the same power and transistor count, a 34% power reduction at the same clocks and complexity, and a 0.79x logic area reduction. However, Samsung doesn't compare its SF3 to SF3E, and there is no word about the SRAM and analog circuit scaling.

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