X-Fab adds new passive integration technology for RF

X-FAB the analogue/mixed-signal and specialty foundry, has added to its proficiency in RF by announcing new integrated passive device (IPD) fabrication capabilities.

www.electronicsweekly.com/, Sept. 14, 2023 – 

XIPD is derived from the X-FAB XR013 130nm RF SOI process and leverages an engineered substrate along with a thick copper metallisation layer.

The technology enables customers to integrate passive elements (inductors, capacitors and resistors) directly into their device designs, resulting in significant space and cost savings.

Fabrication is undertaken at X-FAB's facility in Corbeil-Essonnes, France, capitalizing on the company's extensive experience in copper metallization.

The ongoing roll-out of 5G cellular infrastructure along with the development of 6G communications and the emergence of the latest generation of radar and satellite communications technology, have meant that devices are needed that exhibit wider frequency support.

Through use of the XIPD platform, demands for more compact RF/EMI filtering, matching networks, baluns and couplers can be met – via the fabrication of fully integrated high-quality passive components with improved performance characteristics.

Instead of having to rely on the use of surface-mount or discrete passive components, which can prove inconvenient due to component deviation at high frequency or increased component sourcing complexity, XIPD enables a much more effective route that streamlines overall system design, accelerates development cycles, simplifies manufacturing and curbs the engineering expenses involved.

Operation across an extensive frequency range, from the sub-6GHz band all the way to the high-end of the mmW band, can be accommodated.

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