STMicroelectronics breaks the 20nm barrier for cost-competitive next-generation microcontrollers

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• First STM32 microcontroller based on new technology to sample to selected customers in the second half of 2024.
• 18nm FD-SOI with embedded phase change memory (ePCM) to deliver a leap in performance and power consumption.

www.st.com/, Mar. 19, 2024 – 

STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronic applications, announces an advanced process based on 18nm Fully Depleted Silicon On Insulator (FD-SOI) technology with embedded phase change memory (ePCM) to support next-generation embedded processing devices. This new process technology, co-developed by ST and Samsung Foundry, delivers a leap in performance and power consumption for embedded processing applications while allowing larger memory sizes and higher levels of integration of analog and digital peripherals. The first next-generation STM32 microcontroller based on the new technology will start sampling to selected customers in the second half of 2024, with production planned for the second half of 2025.

Remi El-Ouazzane, President of Microcontrollers, Digital ICs and RF products Group at STMicroelectronics, said: "As a leading innovator in the semiconductor industry, ST has pioneered and brought to our customers FD-SOI and PCM technologies for automotive and aerospace applications. We are now taking the next step to bring the benefits of these technologies to developers of industrial applications starting with our next-generation STM32 microcontrollers."

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