Samsung announces 2nm GAA process has 5% more perf, 8% more efficient than 3nm GAA

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Nov. 24, 2025 – 

Samsung discloses next-gen 2nm GAA performance and efficiency: 8% improvement over 3nm GAA, yields are approximately at 50-60% range.

By Anthony Garreffa, TweakTown

Samsung has officially announced its mass production results for its new 2nm GAA process node, saying that it's 5% faster, 8% more efficient, and has 5% more area than its current 3nm GAA process.

Samsung Electronics announced the update on its new 2nm GAA process node mass production during its Q3 2025 earnings report, stating: "the 2nm first-generation gate-all-around (GAA) process has improved performance by 5%, power efficiency by 8%, and area by 5% compared to the 3nm second-generation process".

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