Leti Strains to Improve FDSOI

by Peter Clarke - EETimes

LONDON, Dec. 17, 2015 – 

French research institute CEA-Leti has reported on two techniques to put local strain in the silicon channel of a fully-depleted silicon-on-insulator (FDSOI) manufacturing process.

STMicroelectronics and Globalfoundries are championing the FDSOI process as a means to achieve world-class energy efficiency in leading edge integrated circuits without the complexity and expense of FinFET manufacturing.

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