GlobalFoundries promises embedded MRAM on state-of-the-art FD-SOI node

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engnews24h.com, Mar. 04, 2020 – 

With 22nm manufacturing technology, many designs will be available to partners.

GlobalFoundries has announced the completion of their embedded MRAM enhancements for the 22nm FD-SOI node, so their partners will finalize a number of designs this year.

MRAM (Magnetoresistance Random Access Memory) technology is one of the great promises of the future, as it uses magnetic principle layers that can store data by modifying polarization. Layers are understood to be paired, that is, within cells holding one bit, there are two of them. One layer can be polarized while the other layer can be changed by current. Accordingly, there may be two states within a cell, i.e., the polarities of the layers are either the same or different. This difference makes it possible to store information. In the long run, MRAM seems to be one of the best options for replacing the more problematic flash memory, and what is particularly advantageous over the previous solutions is that MRAM cells are not really tired. load capacity will be high.

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