SiC and GaN Drive Vehicle Electrification

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The outlook for the SiC and GaN markets is promising, and they have the potential to revolutionize the way that we power our vehicles and devices.

www.eetimes.eu/, Jun. 21, 2023 – 

The automotive industry is going through a technological revolution, and semiconductor chips are at the forefront of this transformation. As cars become more advanced, faster communication systems, advanced driver-assistance systems (ADAS) and efficient power converters are becoming increasingly important. The semiconductor market is expected to grow at a double-digit compound annual growth rate and reach US$1 trillion by 2030, with the automotive market contributing more than 20%.

One of the main drivers of this growth is the use of discrete devices like MOSFETs and IGBTs in power converters: inverters, DC/DC and on-board chargers (OBCs). By 2030, discrete components are expected to make up over 52% of the total semiconductor content per vehicle, with an average cost rising from US$301 to US$563 per vehicle.

Discrete power compound semiconductors (e.g., silicon carbide and gallium nitride) are capable of operating at higher frequencies, voltages and temperatures than traditional Si-based semiconductors, making them more efficient and ideal for high-performance automotive applications. SiC devices are already being adopted into electric vehicles, while GaN is still in its infancy and is expected to enter the EV market in the future.

Investing in these technologies will pave the way for innovation and open up new opportunities for the automotive sector as it moves toward electrification.

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